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Title: All-optical depletion of dark excitons from a semiconductor quantum dot

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4921000· OSTI ID:22399052
; ; ;  [1];  [1]; ;  [2]
  1. The Physics Department and the Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
  2. Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin (Germany)

Semiconductor quantum dots are considered to be the leading venue for fabricating on-demand sources of single photons. However, the generation of long-lived dark excitons imposes significant limits on the efficiency of these sources. We demonstrate a technique that optically pumps the dark exciton population and converts it to a bright exciton population, using intermediate excited biexciton states. We show experimentally that our method considerably reduces the dark exciton population while doubling the triggered bright exciton emission, approaching thereby near-unit fidelity of quantum dot depletion.

OSTI ID:
22399052
Journal Information:
Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English