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Title: Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3]
  1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
  2. (Japan)
  3. MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
Publication Date:
OSTI Identifier:
22399040
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DIFFUSION; DISSOCIATION ENERGY; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; FLUCTUATIONS; FREE ENTHALPY; INDIUM OXIDES; MOLECULES; OXYGEN; SEMICONDUCTOR MATERIALS; SILICON OXIDES; THIN FILMS; TRANSISTORS