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Title: Electronic properties of substitutional impurities in InGaN monolayer quantum wells

InGaN alloys and, in particular, InGaN monolayer quantum wells (MLQWs) are attracting an increasing amount of interest for opto-electronic applications. Impurities, incorporated during growth, can introduce electronic states that can degrade the performance of such devices. For this reason, we present a density functional and group theoretical study of the electronic properties of C, H, or O impurities in an InGaN MLQW. Analysis of the formation energy and symmetry reveals that these impurities are mostly donors and can be held accountable for the reported degradation of InGaN-based devices.
Authors:
 [1] ; ;  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan)
  2. Department of Materials System Science, Yokohama City University, Yokohama 236-0027 (Japan)
Publication Date:
OSTI Identifier:
22399039
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; FORMATION HEAT; GALLIUM NITRIDES; IMPURITIES; INDIUM COMPOUNDS; PERFORMANCE; QUANTUM WELLS; SYMMETRY