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Title: Electric field and temperature dependence of dielectric permittivity in strontium titanate investigated by a photoemission study on Pt/SrTiO{sub 3}:Nb junctions

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4921092· OSTI ID:22399035
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  1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. Synchrotron X-ray Station at SPring-8, NIMS, 1-1-1 Kouto, Sayo, Hyogo 679-5148 (Japan)
  3. Murata Manufacturing Co., Ltd., 10–1, Higashikotari 1–chome, Nagaokakyo–shi, Kyoto 617–8555 (Japan)

Schottky junctions made from platinum and niobium-doped strontium titanate (SrTiO{sub 3}:Nb) were investigated by hard X-ray photoemission (HXPES) and through a band bending behavior simulation using a phenomenological model, which assumes a decrease in dielectric constant due to an electric field. Thus, we confirmed that the observed HXPES spectra at relatively high temperatures, e.g., >250 K, were well simulated using this phenomenological model. In contrast, it was inferred that the model was not appropriate for junction behavior at lower temperatures, e.g., <150 K. Therefore, a reconstruction of the phenomenological model is necessary to adequately explain the dielectric properties of SrTiO{sub 3}.

OSTI ID:
22399035
Journal Information:
Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

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