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Title: Shape transition in nano-pits after solid-phase etching of SiO{sub 2} by Si islands

We study the nano-pits formed during the etching of a SiO{sub 2} film by reactive Si islands at T≈1000 °C. Combining low energy electron microscopy, atomic force microscopy, kinetic Monte Carlo simulations, and an analytic model based on reaction and diffusion at the solid interface, we show that the shape of the nanopits depend on the ratio R/x{sub s} with R the Si island radius and x{sub s} the oxygen diffusion-length at the Si/SiO{sub 2} interface. For small R/x{sub s}, nanopits exhibit a single-well V-shape, while a double-well W-shape is found for larger R/x{sub s}. The analysis of the transition reveals that x{sub s}∼60 nm at T≈1000 °C.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Aix Marseille Université CNRS, CINaM UMR 7325, 13288 Marseille (France)
  2. Department of Physics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama (Japan)
  3. Institut Lumière Matière, UMR 5306 Université Lyon-1-CNRS, 69622 Villeurbanne (France)
Publication Date:
OSTI Identifier:
22399034
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; COMPUTERIZED SIMULATION; DIFFUSION; DIFFUSION LENGTH; ELECTRON MICROSCOPY; ETCHING; FILMS; INTERFACES; MONTE CARLO METHOD; OXYGEN; SILICON; SILICON OXIDES; SOLIDS