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Title: Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures

We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells (QWs) using optical characterizations and demonstrate its potential to work as a hot carrier cell absorber. By analyzing photoluminescence spectra, the quasi Fermi level splitting Δμ and the carrier temperature are quantitatively measured as a function of the excitation power. Moreover, both thermodynamics values are measured at the QWs and the barrier emission energy. High values of Δμ are found for both transition, and high carrier temperature values in the QWs. Remarkably, the quasi Fermi level splitting measured at the barrier energy exceeds the absorption threshold of the QWs. This indicates a working condition beyond the classical Shockley-Queisser limit.
Authors:
;  [1] ; ;  [2] ;  [1] ;  [3]
  1. IRDEP, Institute of R and D on Photovoltaic Energy, UMR 7174, CNRS-EDF-Chimie ParisTech, 6 Quai Watier-BP 49, 78401 Chatou Cedex (France)
  2. INSA, FOTON-OHM, UMR 6082, F-35708 Rennes (France)
  3. (Japan)
Publication Date:
OSTI Identifier:
22399027
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; CHARGE CARRIERS; EMISSION SPECTRA; EXCITATION; FERMI LEVEL; HETEROJUNCTIONS; OPERATION; PHOTOLUMINESCENCE; POTENTIALS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; THERMODYNAMICS