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Title: Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ; ;  [4] ;  [5]
  1. School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia)
  2. Department of Physics, Indian Institute of Technology, Bombay, Powai, Mumbai 400076 (India)
  3. Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
  4. Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany)
  5. Department Physik, Universität Paderborn, Warburger Strasse 100, D-33098 Paderborn (Germany)
Publication Date:
OSTI Identifier:
22399022
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM COMPOUNDS; CARRIER MOBILITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; ELECTRIC CONTACTS; ELECTRONS; FABRICATION; GALLIUM ARSENIDES; HOLES; ONE-DIMENSIONAL CALCULATIONS; POTENTIALS