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Title: p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer

The (Cs,O)-activation procedure for p-GaAs(Cs,O)-photocathodes was studied with the aim of demarcating the domains of validity for the two practical models of the (Cs,O)-activation layer: The dipole layer (DL) model and the heterojunction (HJ) model. To do this, the photocathode was activated far beyond the normal maximum of quantum efficiency, and several photocathode parameters were measured periodically during this process. In doing so, the data obtained enabled us to determine the domains of validity for the DL- and HJ-models, to define more precisely the characteristic parameters of the photocathode within both of these domains and thus to reveal the peculiarities of the influence of the (Cs,O)-layer on the photoelectron escape probability.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentjev Avenue, Novosibirsk 630090 (Russian Federation)
  2. STFC Daresbury Laboratory, ASTeC and the Cockcroft Institute, Warrington WA4 4AD (United Kingdom)
Publication Date:
OSTI Identifier:
22399020
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CESIUM; DIPOLES; GALLIUM ARSENIDES; HETEROJUNCTIONS; LAYERS; OXYGEN; PERIODICITY; PHOTOCATHODES; PROBABILITY; P-TYPE CONDUCTORS; QUANTUM EFFICIENCY