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Title: Oxygen vacancy induced magnetization switching in Fe{sub 3}O{sub 4} epitaxial ultrathin films on GaAs(100)

The magnetic and transport properties of half metallic Fe{sub 3}O{sub 4}, which are sensitive to the stoichiometry, are the key issue for applications in spintronics. An anomalous enlargement of the saturation magnetic moment is found in a relatively thick sample of epitaxial Fe{sub 3}O{sub 4} film by post-growth oxidation method. The investigation of the thickness dependence of magnetic moment suggests that the enhanced magnetism moment may come from the existence of oxygen vacancies. First-principles calculations reveal that with oxygen vacancies in Fe{sub 3}O{sub 4} crystal the spin of Fe ions in the tetrahedron site near the vacancy is much easier to switch parallel to the Fe ions in the octahedron site by temperature disturbance, supported by the temperature dependence of magnetic moment of Fe{sub 3}O{sub 4} films in experiment.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [1] ;  [4] ;  [5]
  1. Department of Physics, Southeast University, Nanjing 211189 (China)
  2. (United Kingdom)
  3. (China)
  4. Spintronics and Nanodevice Laboratory, Department of Electronics, University of York, York YO10 5DD (United Kingdom)
  5. School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)
Publication Date:
OSTI Identifier:
22399002
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALS; EPITAXY; FERRITES; GALLIUM ARSENIDES; IRON IONS; IRON OXIDES; MAGNETIC MOMENTS; MAGNETISM; MAGNETIZATION; OXIDATION; OXYGEN; SPIN; STOICHIOMETRY; TEMPERATURE DEPENDENCE; THIN FILMS; VACANCIES