skip to main content

SciTech ConnectSciTech Connect

Title: Fermi energy tuning with light to control doping profiles during epitaxy

The influence of light stimulation and photogenerated carriers on the process of dopant surface segregation during growth is studied in molecular beam epitaxially grown Si-doped GaAs structures. The magnitude of surface segregation decreases under illumination by above-bandgap photons, wherein splitting of the quasi Fermi levels reduces the band bending at the growth surface and raises the formation energy of compensating defects that can enhance atomic diffusion. We further show that light-stimulated epitaxy can be used as a practical approach to diminish dopant carry-forward in device structures and improve the performance of inverted modulation-doped quantum wells.
Authors:
; ; ;  [1]
  1. Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22399001
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; CONTROL; DIFFUSION; DOPED MATERIALS; ENERGY GAP; EPITAXY; FERMI LEVEL; FORMATION HEAT; GALLIUM ARSENIDES; ILLUMINANCE; MODULATION; PHOTONS; QUANTUM WELLS; SILICON; STIMULATION; SURFACES; VISIBLE RADIATION