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Title: Graphite edge controlled registration of monolayer MoS{sub 2} crystal orientation

Transition metal dichalcogenides such as the semiconductor MoS{sub 2} are a class of two-dimensional crystals. The surface morphology and quality of MoS{sub 2} grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS{sub 2} islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS{sub 2} adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS{sub 2} grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge.
Authors:
; ; ; ; ; ; ;  [1] ; ; ; ;  [2] ;  [1] ;  [3]
  1. Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China)
  3. (China)
Publication Date:
OSTI Identifier:
22398997
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALS; GRAPHITE; MOLYBDENUM SULFIDES; MORPHOLOGY; ORIENTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; TWO-DIMENSIONAL SYSTEMS