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Title: Individual identification of free hole and electron dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} thin films by simultaneous monitoring of two optical transitions

The photocarrier dynamics of CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) thin films were studied using white-light transient absorption (TA) measurements, as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the splitting of the valence bands in the CIGS was observed in the TA spectra under near-band-gap resonant excitation. From a comparison of the TA decay dynamics monitored at these two peaks, it was found that the slow-decay components of the electron and hole relaxation are on the nanosecond timescale. This finding is clear evidence of the long lifetimes of free photocarriers in polycrystalline CIGS thin films.
Authors:
 [1] ; ; ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
  2. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22398996
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; COMPARATIVE EVALUATIONS; ELECTRONIC STRUCTURE; ELECTRONS; EXCITATION; HOLES; LIFETIME; LIGHT TRANSMISSION; PERFORMANCE; POLYCRYSTALS; RELAXATION; SOLAR CELLS; THIN FILMS; TRANSIENTS; VISIBLE RADIATION