Manipulation of strain state in silicon nanoribbons by top-down approach
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
- Department of Materials Science, Fudan University, Shanghai 200433 (China)
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
Tensile strain is often utilized to enhance the electron mobility and luminescent characteristics of semiconductors. A top-down approach in conjunction with roll-up technology is adopted to produce high tensile strain in Si nanoribbons by patterning and releasing of the bridge-like structures. The tensile strain can be altered between uniaxial state and biaxial state by adjusting the dimensions of the patterns and can be varied controllably up to 3.2% and 0.9% for the uniaxial- and biaxial-strained Si nanoribbons, respectively. Three-dimensional finite element analysis is performed to investigate the mechanism of strain generation during patterning and releasing of the structure. Since the process mainly depends on the geometrical factors, the technique can be readily extended to other types of mechanical, electrical, and optical membranes.
- OSTI ID:
- 22398983
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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