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Title: Investigation of chemical distribution in the oxide bulk layer in Ti/HfO{sub 2}/Pt memory devices using x-ray photoelectron spectroscopy

Resistive switching (RS) of Ti/HfO{sub 2}/Pt memory devices was studied using X-ray photoelectron spectroscopy. Hf{sup 4+} monotonously decreases with depth increasing towards to HfO{sub 2}/Pt interface in low resistance state, while a fluctuation distribution of Hf{sup 4+} is shown in high resistance state (HRS) and in the pristine Ti/HfO{sub 2}/Pt devices (without any SET or RESET process). It is explained by the existence of locally accumulated oxygen vacancies (clusters) in the oxide bulk layer in HRS and pristine states. A dynamic model of RS processes was proposed that the oxygen vacancy clusters dominantly determines the resistivity by the connecting/rupture between the neighbor cluster sites in the bulk.
Authors:
; ; ;  [1]
  1. School of Physics, Shandong University, Jinan, Shandong 250100 (China)
Publication Date:
OSTI Identifier:
22398979
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; FLUCTUATIONS; HAFNIUM IONS; HAFNIUM OXIDES; INTERFACES; LAYERS; MEMORY DEVICES; OXYGEN; PLATINUM; TITANIUM; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY