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Title: Nb-doped single crystalline MoS{sub 2} field effect transistor

We report on the demonstration of a p-type, single crystalline, few layer MoS{sub 2} field effect transistor (FET) using Niobium (Nb) as the dopant. The doping concentration was extracted and determined to be ∼3 × 10{sup 19}/cm{sup 3}. We also report on bilayer Nb-doped MoS{sub 2} FETs with ambipolar conduction. We found that the current ON-OFF ratio of the Nb-doped MoS{sub 2} FETs changes significantly as a function of the flake thickness. We attribute this experimental observation to bulk-type electrostatic effect in ultra-thin MoS{sub 2} crystals. We provide detailed analytical modeling in support of our claims. Finally, we show that in the presence of heavy doping, even ultra-thin 2D-semiconductors cannot be fully depleted and may behave as a 3D material when used in transistor geometry. Our findings provide important insights into the doping constraints of 2D materials, in general.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  2. (United States)
  3. Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Publication Date:
OSTI Identifier:
22398978
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; LAYERS; LIMITING VALUES; MOLYBDENUM SULFIDES; MONOCRYSTALS; NIOBIUM; P-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS; THIN FILMS