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Title: Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon

This study demonstrates that the presence of a hydrogen source during fast-firing is critical to the regeneration of B-O defects and that is it not a pure thermally based mechanism or due to plasma exposure. Boron-doped p-type wafers were fired with and without hydrogen-rich silicon nitride (SiN{sub x}:H) films present during the fast-firing process. After an initial light-induced degradation step, only wafers fired with the SiN{sub x}:H films present were found to undergo permanent and complete recovery of lifetime during subsequent illuminated annealing. In comparison, wafers fired bare, i.e., without SiN{sub x}:H films present during firing, were found to demonstrate no permanent recovery in lifetime. Further, prior exposure to hydrogen-rich plasma processing was found to have no impact on permanent lifetime recovery in bare-fired wafers. This lends weight to a hydrogen-based model for B-O defect passivation and casts doubt on the role of non-hydrogen species in the permanent passivation of B-O defects in commercial-grade p-type Czochralski silicon wafers.
Authors:
; ; ; ;  [1]
  1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 2031 Sydney (Australia)
Publication Date:
OSTI Identifier:
22398977
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON; CARRIER LIFETIME; COMPARATIVE EVALUATIONS; DOPED MATERIALS; FILMS; HYDROGEN; PASSIVATION; PLASMA; P-TYPE CONDUCTORS; SILICON; SILICON NITRIDES; STABILIZATION; VISIBLE RADIATION