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Title: Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
  2. (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)
  3. (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)
Publication Date:
OSTI Identifier:
22398976
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER; DEPOSITION; ELECTRIC POTENTIAL; HETEROJUNCTIONS; IRRADIATION; OPERATION; OXIDATION; OXYGEN; PLATINUM; TANTALUM; TANTALUM OXIDES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS