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Title: Characteristics and mechanism study of cerium oxide based random access memories

In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeO{sub x} is considered as a relatively new material to other dielectrics. Since research on CeO{sub x} based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeO{sub x} RRAMs and also compare electrical performance of Al/CeO{sub x}/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.
Authors:
; ; ; ;  [1]
  1. Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22398975
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; CERIUM OXIDES; COMPARATIVE EVALUATIONS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GOLD; HETEROJUNCTIONS; OPERATION; PERFORMANCE; PERMITTIVITY; RANDOMNESS; THIN FILMS