Magnetotransport in p-type Ge quantum well narrow wire arrays
- Department of Physics, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
- Toshiba Research Europe Limited, Cambridge Research Laboratory, 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom)
- Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
We report magnetotransport measurements of a SiGe heterostructure containing a 20 nm p-Ge quantum well with a mobility of 800 000 cm{sup 2} V{sup −1} s{sup −1}. By dry etching arrays of wires with widths between 1.0 μm and 3.0 μm, we were able to measure the lateral depletion thickness, built-in potential, and the phase coherence length of the quantum well. Fourier analysis does not show any Rashba related spin-splitting despite clearly defined Shubnikov-de Haas oscillations being observed up to a filling factor of ν = 22. Exchange-enhanced spin-splitting is observed for filling factors below ν = 9. An analysis of boundary scattering effects indicates lateral depletion of the hole gas by 0.5 ± 0.1 μm from the etched germanium surface. The built-in potential is found to be 0.25 ± 0.04 V, presenting an energy barrier for lateral transport greater than the hole confinement energy. A large phase coherence length of 3.5 ± 0.5 μm is obtained in these wires at 1.7 K.
- OSTI ID:
- 22398963
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIER MOBILITY
COHERENCE LENGTH
CONFINEMENT
DIFFUSION BARRIERS
ETCHING
FOURIER ANALYSIS
GERMANIUM
GERMANIUM SILICIDES
HOLES
OSCILLATIONS
POTENTIALS
QUANTUM WELLS
SCATTERING
SHUBNIKOV-DE HAAS EFFECT
SPIN
SURFACES