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Title: Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al{sub 2}O{sub 3}/Si using hard x-ray photoelectron spectroscopy

Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxide-semiconductor (MOS) samples consisting of Si, thick and thin Al{sub 2}O{sub 3}, and a Ti metal cap. Using Si 1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal information about the location and roles of charges throughout the MOS layers. With different oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment values between the thin and thick films, which are explained by the behavior of mobile charge within the Al{sub 2}O{sub 3} layer.
Authors:
;  [1] ;  [2]
  1. University of Delaware, Newark, Delaware 19711 (United States)
  2. Synchrotron Research, Inc., Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22398954
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALIGNMENT; ALUMINIUM OXIDES; DEPOSITION; FILMS; HARD X RADIATION; HETEROJUNCTIONS; INTERFACES; LAYERS; PHOTOELECTRON SPECTROSCOPY; PROBES; SEMICONDUCTOR MATERIALS; SENSITIVITY; SILICON; SILICON OXIDES; TITANIUM; X-RAY SPECTROSCOPY