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Title: Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.
Authors:
; ;  [1] ;  [2] ; ; ;  [3]
  1. Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)
  2. Department of Physics, University of Konstanz, Konstanz 78457 (Germany)
  3. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
Publication Date:
OSTI Identifier:
22398950
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CORRELATIONS; CRYSTAL STRUCTURE; CRYSTALS; FINE STRUCTURE; GALLIUM NITRIDES; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; POLARIZATION; QUANTUM DOTS