Negative-T{sub 0} InGaN laser diodes and their degradation

Journal Article · Mon Apr 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4918994· OSTI ID:22398949

Bojarska, Agata; Suski, Tadeusz ^[1]; Marona, Łucja; Czernecki, Robert; Leszczynski, Mike; Perlin, Piotr ^[1]; Makarowa, Irina ^[2]

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1. Institute of High Pressure Physics, “Unipress”, Sokolowska 29/37, 01-142 Warsaw (Poland)
2. TopGaN Limited, Sokolowska 29/37, 01-142 Warsaw (Poland)

We studied the InGaN laser diode, emitting in the blue region of the spectrum and characterized by a negative characteristic temperature T{sub 0}. The corresponding decrease in the threshold current with the increase in temperature for this device is caused by the increased distance between the electron-blocking layer and the quantum wells. Because of the non-monotonic temperature dependence of laser parameters, we can demonstrate a correlation of the degradation rate with nonradiative part of the total device current. This result indicates the potential importance of the recombination processes occurring outside of the active region for the reliability of InGaN laser diodes.

• OSTI ID: 22398949
• Journal Information: Applied Physics Letters, Vol. 106, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CORRELATIONS
DEPLETION LAYER
ELECTRONS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LASERS
QUANTUM WELLS
RECOMBINATION
RELIABILITY
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT