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Title: Negative-T{sub 0} InGaN laser diodes and their degradation

We studied the InGaN laser diode, emitting in the blue region of the spectrum and characterized by a negative characteristic temperature T{sub 0}. The corresponding decrease in the threshold current with the increase in temperature for this device is caused by the increased distance between the electron-blocking layer and the quantum wells. Because of the non-monotonic temperature dependence of laser parameters, we can demonstrate a correlation of the degradation rate with nonradiative part of the total device current. This result indicates the potential importance of the recombination processes occurring outside of the active region for the reliability of InGaN laser diodes.
Authors:
;  [1] ; ; ; ;  [1] ;  [2] ;  [3]
  1. Institute of High Pressure Physics, “Unipress”, Sokolowska 29/37, 01-142 Warsaw (Poland)
  2. (Poland)
  3. TopGaN Limited, Sokolowska 29/37, 01-142 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22398949
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CORRELATIONS; DEPLETION LAYER; ELECTRONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LASERS; QUANTUM WELLS; RECOMBINATION; RELIABILITY; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT