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Title: Apertureless scanning microscope probe as a detector of semiconductor laser emission

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.
Authors:
 [1] ;  [2] ; ;  [1] ; ;  [1] ;  [3] ; ; ; ;  [4]
  1. Ioffe Institute, Saint-Petersburg 194021 (Russian Federation)
  2. (ITMO), Saint-Petersburg 197101 (Russian Federation)
  3. (Russian Federation)
  4. Institut d'Electronique du Sud, UMR 5214 UM2-CNRS, CC082, Université Montpellier 2, 34095 Montpellier Cedex 5 (France)
Publication Date:
OSTI Identifier:
22398948
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; COMPARATIVE EVALUATIONS; DISTANCE; EMISSION; HEATING; INFRARED RADIATION; INTERFERENCE; LASER RADIATION; MICROSCOPY; PERIODICITY; PROBES; REFLECTION; RESONANCE; SEMICONDUCTOR LASERS; SURFACES; VISIBLE RADIATION