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Title: Interface-state capture cross section—Why does it vary so much?

A capture cross section value is often assigned to Si–SiO{sub 2} interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement approach and does not provide any meaningful insight into the physics involved. We argue that capture cross section is neither a physical property of interface defects nor is there any need to assign capture cross section values.
Authors:
; ; ;  [1]
  1. Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899 (United States)
Publication Date:
OSTI Identifier:
22398938
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 16; Other Information: (c) 2015 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPTURE; CROSS SECTIONS; CRYSTAL DEFECTS; INTERFACES; PUMPING; SILICON; SILICON OXIDES; VARIATIONS