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Title: Solution-processed polycrystalline silicon on paper

Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their printability, while these materials lack in the electronic performance when compared to silicon electronics. Silicon electronics, on the other hand, has only recently found their way in solution processes. Printing of cyclopentasilane as the silicon ink has been conducted and devices with far superior electric performance have been made when compared to other ink materials. A thermal annealing step of this material, however, was necessary, which prevented its usage on inexpensive substrates with a limited thermal budget. In this work, we introduce a method that allows polycrystalline silicon (poly-Si) production directly from the same liquid silicon ink using excimer laser irradiation. In this way, poly-Si could be formed directly on top of paper even with a single laser pulse. Using this method, poly-Si transistors were created at a maximum temperature of only 150 °C. This method allows silicon device formation on inexpensive, temperature sensitive substrates such as polyethylene terephthalate, polyethylenemore » naphthalate or paper, which leads to applications that require low-cost but high-speed electronics.« less
Authors:
;  [1] ;  [2]
  1. Delft Institute for Microsystems and Nanoelectronics (DIMES), Delft University of Technology, Feldmannweg 17, 2628CT Delft (Netherlands)
  2. Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292 (Japan)
Publication Date:
OSTI Identifier:
22398937
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COMPARATIVE EVALUATIONS; EXCIMER LASERS; INKS; LASER RADIATION; LIQUIDS; OXIDES; POLYCRYSTALS; POLYESTERS; POLYETHYLENES; PROCESS SOLUTIONS; PULSED IRRADIATION; SILICON; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS; VELOCITY