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Title: On the structural origins of ferroelectricity in HfO{sub 2} thin films

Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO{sub 2} thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO{sub 2} thin films.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States)
  2. NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64, Dresden D-01187 (Germany)
Publication Date:
OSTI Identifier:
22398933
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CRYSTALS; DOPED MATERIALS; ELECTRON DIFFRACTION; GADOLINIUM COMPOUNDS; HAFNIUM OXIDES; LATTICE PARAMETERS; NANOSTRUCTURES; ORTHORHOMBIC LATTICES; POLARIZATION; SYMMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY