skip to main content

SciTech ConnectSciTech Connect

Title: High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

High hole concentration was achieved in Mg-doped Al{sub x}Ga{sub 1−x}N (x ∼ 0.4) by using indium-surfactant-assisted delta doping method. A maximum carrier concentration of 4.75 × 10{sup 18 }cm{sup −3} was obtained, which is three times higher than that of the conventionally delta-doped sample. Sheet resistivity as low as 2.46 × 10{sup 4} Ω/sq was realized, benefiting from the high hole concentration (p). Analysis results show that the Mg incorporation is effectively enhanced, while the compensation ratio and acceptor activation energy (E{sub A}) are significantly reduced by using In surfactant. It was also found that the In surfactant may induce stronger valence-band modulation, contributing to the decrease of E{sub A} and the increase of p.
Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
Publication Date:
OSTI Identifier:
22398924
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 16; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABUNDANCE; ACTIVATION ENERGY; ALUMINIUM COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; HOLES; INDIUM; MAGNESIUM; MODULATION; SHEETS; SURFACTANTS; VALENCE