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Title: Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.
Authors:
; ; ; ; ; ;  [1] ; ; ;  [2] ;  [3] ;  [4] ;  [5]
  1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  3. Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
  4. Department of Chemical and Biological Engineering, Korea University, Seoul 136-713 (Korea, Republic of)
  5. Department of Electronic Science and Technology, Hebei University of Technology, Tianjin 300401 (China)
Publication Date:
OSTI Identifier:
22398910
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANNEALING; DENSITY; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; INTERFACES; LEAKAGE CURRENT; PERFORMANCE; SIGNALS; STRESSES; TEMPERATURE DEPENDENCE; TRANSISTORS; TRAPS