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Title: Effect of magnetic field enhancement of the photocurrent in ferromagnetic metal-dielectric heterostructures SiO{sub 2}(Co)/GaAs

Heterostructures of silicon dioxide films containing cobalt nanoparticles SiO{sub 2}(Co) grown on GaAs substrate exhibit at room temperature high values of magnetic field enhancement of photocurrent in the vicinity and above the GaAs bandgap of ∼1.4 eV. For photon energies E above the GaAs bandgap, the photocurrent significantly increases, while the avalanche process is suppressed by the magnetic field, and the current flowing through the heterostructure decreases. The photocurrent is enhanced in the SiO{sub 2}(Co 60 at. %)/GaAs heterostructure at the magnetic field H = 1.65 kOe by a factor of about ten for the photon energy E = 1.5 eV. This phenomenon is explained by a model describing electronic transitions in magnetic fields with the spin-dependent recombination process at deep impurity centers in the GaAs interface region.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
  2. Scientific and Practical Materials Research Centre, National Academy of Sciences of Belarus, 220072 Minsk (Belarus)
Publication Date:
OSTI Identifier:
22398900
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COBALT; DIELECTRIC MATERIALS; EV RANGE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; FILMS; GALLIUM ARSENIDES; HETEROJUNCTIONS; IMPURITIES; INTERFACES; MAGNETIC FIELDS; NANOPARTICLES; PHOTONS; RECOMBINATION; SILICON OXIDES; SPIN; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K