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Title: High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

Abstract

In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5000 mV/mW.

Authors:
; ;  [1]; ;  [2]; ; ;  [3];  [4]
  1. Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada)
  2. Department of Physics, Center for the Physics of Materials, McGill University, Montreal, Quebec H3A 2T8 (Canada)
  3. Ecole Polytechnique de Montreal, Montreal, Quebec H3T 1J4 (Canada)
  4. Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)
Publication Date:
OSTI Identifier:
22398899
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DETECTION; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FERROMAGNETIC RESONANCE; MAGNETIC FIELDS; MAGNETISM; MICROWAVE RADIATION; NONLINEAR PROBLEMS; SENSITIVITY; SIGNALS; TUNNEL EFFECT

Citation Formats

Gui, Y. S., Bai, L. H., Hu, C. -M., Xiao, Y., Guo, H., Hemour, S., Zhao, Y. P., Wu, K., and Houssameddine, D. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field. United States: N. p., 2015. Web. doi:10.1063/1.4918677.
Gui, Y. S., Bai, L. H., Hu, C. -M., Xiao, Y., Guo, H., Hemour, S., Zhao, Y. P., Wu, K., & Houssameddine, D. High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field. United States. https://doi.org/10.1063/1.4918677
Gui, Y. S., Bai, L. H., Hu, C. -M., Xiao, Y., Guo, H., Hemour, S., Zhao, Y. P., Wu, K., and Houssameddine, D. 2015. "High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field". United States. https://doi.org/10.1063/1.4918677.
@article{osti_22398899,
title = {High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field},
author = {Gui, Y. S. and Bai, L. H. and Hu, C. -M. and Xiao, Y. and Guo, H. and Hemour, S. and Zhao, Y. P. and Wu, K. and Houssameddine, D.},
abstractNote = {In the absence of any external applied magnetic field, we have found that a magnetic tunnel junction (MTJ) can produce a significant output direct voltage under microwave radiation at frequencies, which are far from the ferromagnetic resonance condition, and this voltage signal can be increase by at least an order of magnitude by applying a direct current bias. The enhancement of the microwave detection can be explained by the nonlinear resistance/conductance of the MTJs. Our estimation suggests that optimized MTJs should achieve sensitivities for non-resonant broadband microwave detection of about 5000 mV/mW.},
doi = {10.1063/1.4918677},
url = {https://www.osti.gov/biblio/22398899}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 15,
volume = 106,
place = {United States},
year = {Mon Apr 13 00:00:00 EDT 2015},
month = {Mon Apr 13 00:00:00 EDT 2015}
}