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Title: Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition

The effects of AlN interlayer growth condition on the properties of InAlN/InGaN heterostructures are investigated in detail. Since the properties of InGaN channel are different from the traditional GaN channel, two-step AlN interlayer is proposed, which is proven to be more suitable for the InGaN channel heterostructures than the interlayers grown at constant temperature. Test results show that two-step AlN interlayer can not only significantly improve the interface morphology between the InGaN channel and barrier layers but also make an effective protection of the high-quality InGaN channel. The electron mobility of the InAlN/InGaN heterostructure with two-step AlN interlayer achieves 890 cm{sup 2}/V s with a high two-dimensional-electron-gas density of 1.78 × 10{sup 13 }cm{sup −2}. The gratifying results indicate that the InGaN channel heterostructure with two-step interlayer is a promising candidate for microwave power devices.
Authors:
; ; ; ; ; ; ; ;  [1]
  1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22398895
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEPLETION LAYER; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; MICROWAVE RADIATION; MORPHOLOGY; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; TWO-DIMENSIONAL SYSTEMS