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Title: Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF{sub 3}/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.
Authors:
; ; ; ; ;  [1]
  1. Walter Schottky Institut, Technische Universität München, Am Coulombwall 4, 85748 Garching (Germany)
Publication Date:
OSTI Identifier:
22398883
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM FLUORIDES; EPITAXY; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; MIRRORS; PHOTON EMISSION; QUANTUM WELLS; SURFACES; TUNNEL EFFECT; WAVELENGTHS; ZINC SULFIDES