Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure
We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Combined Hall densities (n{sub Hall}) ranging from 2.6 × 10{sup 10} cm{sup −2} to 2.7 × 10{sup 11} cm{sup −2} were achieved, yielding a maximal combined Hall mobility (μ{sub Hall}) of 7.7 × 10{sup 5} cm{sup 2}/(V ⋅ s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to n{sub Hall} > 3.3 × 10{sup 10} cm{sup −2}, consistent with Schrödinger-Poisson simulations. The integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap.
- OSTI ID:
- 22398872
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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