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Title: Determination of effective optical gap in dye/TiO{sub 2} systems inspired by p-n junctions

The effective optical gap and device current limits of dye-sensitized solar cells (DSCs) were investigated. Optical gap determination was based on an approach that assumes the presence of a nanoscale p-n junction in the DSCs between the bulk TiO{sub 2} semiconductor and the dye-cluster with quantum size effect. On the basis of this approach, the effective optical gap of the dye-absorber was extracted from a relation between external quantum efficiency and photon energy. The short-circuit current density of the fabricated DSCs showed a current loss in the range from 3.7 to 5.1 mA cm{sup −2} compared to the device current limit. This current loss can be mainly attributed to the light reflection of the window layer and the native charge-transfer loss by device imperfections, including subsidiary charge-transfer loss by a nanoscale Schottky junction between TiO{sub 2} and the electrolyte.
Authors:
 [1] ; ;  [2]
  1. Department of Mechanical and Aerospace Engineering, University of California at San Diego, La Jolla, California 92093 (United States)
  2. Research Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22398871
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CALORIMETRY; COMPARATIVE EVALUATIONS; CURRENT DENSITY; DYES; ELECTRIC CONTACTS; LAYERS; NANOSTRUCTURES; PHOTONS; P-N JUNCTIONS; QUANTUM EFFICIENCY; REFLECTION; SEMICONDUCTOR MATERIALS; SOLAR CELLS; TITANIUM OXIDES; VISIBLE RADIATION