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Title: Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1] ;  [1] ;  [3]
  1. IMEC, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (France)
  3. (Belgium)
Publication Date:
OSTI Identifier:
22398869
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUTYRIC ACID; COMPARATIVE EVALUATIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; ESTERS; FABRICATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; PHOTODETECTORS; READOUT SYSTEMS; TITANIUM OXIDES; VISIBLE SPECTRA; ZINC OXIDES