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Title: Electrical characterization of multilayer HfSe{sub 2} field-effect transistors on SiO{sub 2} substrate

We fabricated and characterized two-dimensional field-effect transistors (FETs) based on hafnium diselenide (HfSe{sub 2}) crystalline nanoflakes. The HfSe{sub 2} FET exhibits an n-type semiconductor behavior with a high on/off current ratio exceeding 7.5 × 10{sup 6}. In the temperature range of 120 K–280 K, the thermally activated transport is observed at high carrier concentrations, while at low concentrations and low temperatures hopping conduction dominates the transport mechanism. We also observed the metal insulator transition at carrier density of ∼1.8 × 10{sup 12 }cm{sup −2}. This initial report on the physical and electrical characterization of two dimensional HfSe{sub 2} material demonstrates the feasibility of this semiconducting material for electronic devices.
Authors:
 [1] ;  [2] ; ; ; ; ; ; ;  [1]
  1. College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  2. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22398868
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER DENSITY; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM SELENIDES; LAYERS; NANOSTRUCTURES; N-TYPE CONDUCTORS; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS