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Title: Room-temperature polarization switching and antiferromagnetic coupling in epitaxial (Ga,Fe){sub 2}O{sub 3}/SrRuO{sub 3} heterostructures

Room-temperature reversible remnant polarization of gallium ferrite thin-films is reported as a multiferroic material with non-zero order parameters of polarization and magnetization. With the addition of Fe ions in Ga sites, Ga{sub 0.6}Fe{sub 1.4}O{sub 3} (GFO) thin films have been considered as potentially promising of multiferroicity. The b-axis oriented epitaxial GFO films were grown on SrRuO{sub 3}(111)/SrTiO{sub 3}(111). The six-fold symmetric in-plane epitaxy of the GFO films was confirmed using X-ray diffraction. The magnetic moment of the films was measured as a function of temperature and external magnetic field, which shows a room-temperature non-zero magnetization. Macroscopic and microscopic methods have been applied to demonstrate the polarization switching of the films. The remnant polarization is measured as 0.05 μC/cm{sup 2}. Reduction of leaky behaviors of the GFO films owing to the conducting oxide of SrRuO{sub 3} will pave a way to take advantage of the room-temperature non-zero multi-orders for future non-volatile memory device applications.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [2]
  1. Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
  2. Institute of Physics and Chemistry of Materials of Strasbourg, UMR 7504, University of Strasbourg-CNRS, Strasbourg 67043 (France)
  3. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22398863
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIFERROMAGNETISM; COUPLING; CRYSTAL GROWTH; EPITAXY; FERRITES; GALLIUM COMPOUNDS; HETEROJUNCTIONS; IRON IONS; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETIZATION; MEMORY DEVICES; ORDER PARAMETERS; POLARIZATION; RUTHENIUM OXIDES; STRONTIUM TITANATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION