skip to main content

SciTech ConnectSciTech Connect

Title: Verification of electron doping in single-layer graphene due to H{sub 2} exposure with thermoelectric power

We report the electron doping of single-layer graphene (SLG) grown by chemical vapor deposition (CVD) by means of dissociative hydrogen adsorption. The transfer characteristic showed n-type doping behavior similar to that of mechanically exfoliated graphene. Furthermore, we studied the thermoelectric power (TEP) of CVD-grown SLG before and after exposure to high-pressure H{sub 2} molecules. From the TEP results, which indicate the intrinsic electrical properties, we observed that the CVD-grown SLG is n-type doped without degradation of the quality after hydrogen adsorption. Finally, the electron doping was also verified by Raman spectroscopy.
Authors:
; ; ; ;  [1] ;  [2] ; ;  [3] ; ;  [4] ;  [5]
  1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. Department of Nano Science and Technology, Seoul National University, Seoul 151-747 (Korea, Republic of)
  3. Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)
  4. Department of Physics, Incheon National University, Incheon 406-772 (Korea, Republic of)
  5. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Göteborg (Sweden)
Publication Date:
OSTI Identifier:
22398853
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRICAL PROPERTIES; ELECTRONS; GRAPHENE; HYDROGEN; MOLECULES; N-TYPE CONDUCTORS; RAMAN SPECTROSCOPY; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES