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Title: Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

The electrical activation of arsenic (As) implanted in Si is investigated with electron spin resonance (ESR), spreading resistance (SR), and secondary ion mass spectroscopy (SIMS). The As ions were implanted with a dose of 1 × 10{sup 12 }cm{sup −2} and subsequently annealed at various temperatures in the range of 500–1100 °C. The ESR measurements at 10 K show that the density of the As donor electrons for all the annealing temperatures is less than 10% of the As atom concentration measured by SIMS. The SR data indicate that the density of conduction band electrons is several times larger than that of the As donor electrons. These results strongly suggest that most of the As donor electrons are ESR inactive at low temperatures.
Authors:
;  [1] ;  [2] ;  [3]
  1. Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)
  2. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
  3. NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22398848
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ARSENIC; ARSENIC IONS; CONCENTRATION RATIO; DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON SPIN RESONANCE; ELECTRONS; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; SILICON; TEMPERATURE DEPENDENCE