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Title: Electronic band structure of compressively strained Ge{sub 1−x}Sn{sub x} with x < 0.11 studied by contactless electroreflectance

Contactless electroreflectance is applied to study direct optical transitions from the heavy hole, light hole, and spin-orbit split-off band to the conduction band in compressively strained Ge{sub 1−x}Sn{sub x} layers of various Sn concentrations at room temperature. It is shown that the energies of these transitions are in very good agreement with theoretical predictions, which take into account non-linear variation of bandgap and spin-orbit splitting plus the strain-related shifts obtained from the Bir-Pikus theory. The bowing parameter for the direct bandgap has been determined to be 1.8 ± 0.2 eV and agree with this one obtained within ab initio calculations, which is 1.97 eV (for indirect bandgap the bowing parameter is 0.26 eV)
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław (Poland)
  2. Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland)
  3. IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)
Publication Date:
OSTI Identifier:
22398845
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; ELECTRONIC STRUCTURE; ENERGY GAP; EV RANGE; GERMANIUM; HOLES; INTERMETALLIC COMPOUNDS; LAYERS; L-S COUPLING; NONLINEAR PROBLEMS; STRAINS; TEMPERATURE RANGE 0273-0400 K; TIN; VARIATIONS; VISIBLE RADIATION