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Title: Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France)
  2. Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier (France)
  3. (France)
Publication Date:
OSTI Identifier:
22398844
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; RED SHIFT; SAPPHIRE; STRAINS; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION; YTTRIUM NITRIDES