Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Lekhal, K.; De Mierry, P.; Vennéguès, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

doi:10.1063/1.4917222

Title: Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

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Abstract

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

Authors:

Lekhal, K.; De Mierry, P.; Vennéguès, P. ^[1]; Ngo, H. T.; Rosales, D.; Gil, B. ^[2]; Hussain, S. ^[1]

CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France)
Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier (France)

Publication Date:: Mon Apr 06 00:00:00 EDT 2015

OSTI Identifier:: 22398844

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; RED SHIFT; SAPPHIRE; STRAINS; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION; YTTRIUM NITRIDES

Citation Formats


                    Lekhal, K., Damilano, B., E-mail: bd@crhea.cnrs.fr, De Mierry, P., Vennéguès, P., Ngo, H. T., Rosales, D., Gil, B., Hussain, S., and Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4917222.

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                    Lekhal, K., Damilano, B., E-mail: bd@crhea.cnrs.fr, De Mierry, P., Vennéguès, P., Ngo, H. T., Rosales, D., Gil, B., Hussain, S., & Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission.  United States.  https://doi.org/10.1063/1.4917222

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                    Lekhal, K., Damilano, B., E-mail: bd@crhea.cnrs.fr, De Mierry, P., Vennéguès, P., Ngo, H. T., Rosales, D., Gil, B., Hussain, S., and Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2. 2015.  
        "Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission".  United States.  https://doi.org/10.1063/1.4917222.

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@article{osti_22398844,

  title        = {Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission},

  author       = {Lekhal, K. and Damilano, B., E-mail: bd@crhea.cnrs.fr and De Mierry, P. and Vennéguès, P. and Ngo, H. T. and Rosales, D. and Gil, B. and Hussain, S. and Université de Nice Sophia Antipolis, Parc Valrose, 28 av. Valrose, 06108 Nice cedex 2},

  abstractNote = {Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.},

  doi          = {10.1063/1.4917222},

  url          = {https://www.osti.gov/biblio/22398844},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 14,

  volume       = 106,

  place        = {United States},

  year         = {Mon Apr 06 00:00:00 EDT 2015},

  month        = {Mon Apr 06 00:00:00 EDT 2015}

}

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