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Title: Through-silicon via-induced strain distribution in silicon interposer

Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along the [335] direction is found to be in the 10{sup −5} range at room temperature and around 10{sup −4} at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.
Authors:
 [1] ;  [2] ; ; ; ;  [1] ; ;  [3] ;  [4]
  1. Aix-Marseille Université, CNRS, IM2NP UMR 7334, Campus de Saint-Jérôme, Avenue Escadrille Normandie Niemen, Case 142, 13397 Marseille Cedex (France)
  2. (France)
  3. ID01-ESRF, 71, Avenue des Martyrs, 38000 Grenoble (France)
  4. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles (France)
Publication Date:
OSTI Identifier:
22398843
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ANNEALING; COMPUTERIZED SIMULATION; COPPER; SILICON; STRAINS; SYNCHROTRON RADIATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION