Through-silicon via-induced strain distribution in silicon interposer
- Aix-Marseille Université, CNRS, IM2NP UMR 7334, Campus de Saint-Jérôme, Avenue Escadrille Normandie Niemen, Case 142, 13397 Marseille Cedex (France)
- ID01-ESRF, 71, Avenue des Martyrs, 38000 Grenoble (France)
- STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles (France)
Strain in silicon induced by Through-Silicon Via (TSV) integration is of particular interest in the frame of the integration of active devices in silicon interposer. Nano-focused X-ray beam diffraction experiments were conducted using synchrotron radiation to investigate the thermally induced strain field in silicon around copper filled TSVs. Measurements were performed on thinned samples at room temperature and during in situ annealing at 400 °C. In order to correlate the 2D strain maps with finite elements analysis, an analytical model was developed, which takes into account beam absorption in the sample for a given diffraction geometry. The strain field along the [335] direction is found to be in the 10{sup −5} range at room temperature and around 10{sup −4} at 400 °C. Simulations support the expected plastification in some regions of the TSV during the annealing step.
- OSTI ID:
- 22398843
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias
Defect production in strained p-type Si{sub 1-x}Ge{sub x} by Er implantation