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Title: Effects of graphene defect on electronic structures of its interface with organic semiconductor

Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.
Authors:
; ; ; ; ; ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong)
  2. (China)
  3. Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)
Publication Date:
OSTI Identifier:
22398836
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COPPER COMPOUNDS; CRYSTAL DEFECTS; DIFFUSION BARRIERS; DIPOLES; ELECTRONIC STRUCTURE; ELECTRONS; EV RANGE; GRAPHENE; HYDROGEN; INTERFACES; ORGANIC SEMICONDUCTORS; PHOTOELECTRON SPECTROSCOPY; PHTHALOCYANINES; SURFACES