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Title: Evolution of GaAs nanowire geometry in selective area epitaxy

Nanowires (NWs) grown via selective area epitaxy (SAE) show great promise for applications in next generation electronic and photonic devices, yet the design of NW-based devices can be complicated due to the complex kinetics involved in the growth process. The presence of the patterned selective area mask, as well as the changing geometry of the NWs themselves during growth, leads to non-linear growth rates which can vary significantly based on location in the mask and the NW size. Here, we present a systematic study of the evolution of GaAs NW geometry during growth as a function of NW size and pitch. We highlight a breakdown of NW uniformity at extended growth times, which is accelerated for NW arrays with larger separations. This work is intended to outline potential fundamental growth challenges in achieving desired III–V NW array patterns and uniformity via SAE.
Authors:
; ;  [1]
  1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, International Institute for Carbon-Neutral Energy Research (I2CNER), University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
22398828
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BREAKDOWN; CRYSTAL GROWTH; DESIGN; EPITAXY; GALLIUM ARSENIDES; NANOWIRES; NONLINEAR PROBLEMS; PITCHES; POTENTIALS