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Title: Determination of some basic physical parameters of SnO based on SnO/Si pn heterojunctions

P-SnO/n-Si heterojunctions were constructed by using e-beam evaporation in combination with ultra-violet lithography technique. The current-voltage and capacitance-voltage characteristics of the pn heterojunctions were systematically investigated, through which the diode parameters, such as the turn-on voltage, forward-to-reverse current ratio, series resistance, ideality factor, and build-in voltage, were also determined. In particular, the pn heterojunctions presented a relatively good electrical rectifying behavior, with a forward-to-reverse current ratio up to 58 ± 5 at ±2.0 V. The relative permittivity and work function of the SnO films were measured to be 18.8 ± 1.7 and 4.3 eV, respectively. The energy band diagram of the heterojunctions was depicted in detail, which can interpret the rectifying behavior very well.
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [3]
  1. Department of Physics, North University of China, Taiyuan 030051 (China)
  2. (China)
  3. Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
Publication Date:
OSTI Identifier:
22398815
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON BEAMS; ELECTRONIC STRUCTURE; EV RANGE; EVAPORATION; FILMS; HETEROJUNCTIONS; N-TYPE CONDUCTORS; PERMITTIVITY; P-N JUNCTIONS; P-TYPE CONDUCTORS; SILICON; TIN OXIDES; WORK FUNCTIONS