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Title: Movement of basal plane dislocations in GaN during electron beam irradiation

The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5]
  1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation)
  2. (Russian Federation)
  3. National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation)
  4. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
  5. University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22398814
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CRYSTAL GROWTH; DENSITY; DISLOCATIONS; DISTANCE; ELECTRON BEAMS; EPITAXY; FILMS; GALLIUM NITRIDES; IRRADIATION; PHYSICAL RADIATION EFFECTS; PROBES; SCANNING ELECTRON MICROSCOPY