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Title: Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.
Authors:
 [1] ;  [1] ;  [2] ; ; ;  [3]
  1. Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan)
  2. (Japan)
  3. Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)
Publication Date:
OSTI Identifier:
22398799
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM; ALUMINIUM NITRIDES; CRYSTALS; EFFICIENCY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; NANOSTRUCTURES; OPERATION; PHOTON EMISSION; SUBSTRATES; SURFACES; ULTRAVIOLET RADIATION; VISIBLE RADIATION