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Title: Full-range electrical characteristics of WS{sub 2} transistors

We fabricated transistors formed by few layers to bulk single crystal WS{sub 2} to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10{sup 12} cm{sup –2}) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit on a back-gated device on SiO{sub 2}/Si substrate.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States)
  2. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
  3. IBM T.J. Watson Research Center, Yorktown Height, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22398791
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CAPACITORS; CHARGE TRANSPORT; INTERFACES; LAYERS; MONOCRYSTALS; SILICON; SILICON OXIDES; SUBSTRATES; TRANSISTORS; TRAPS; TUNGSTEN SULFIDES